Ga0.47In0.53As: A ternary semiconductor for photodetector applications
- 1 July 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (7) , 709-720
- https://doi.org/10.1109/jqe.1980.1070557
Abstract
No abstract availableKeywords
This publication has 51 references indexed in Scilit:
- Zn-diffused In0.53Ga0.47As/InP avalanche photodetectorApplied Physics Letters, 1979
- InGaAsP heterostructure avalanche photodiodes with high avalanche gainApplied Physics Letters, 1979
- Long-wavelength InGaAsP avalanche photodiodesApplied Physics Letters, 1979
- p-n junction diodes in InP and In1−xGaxAsyP1−y fabricated by beryllium-ion implantationApplied Physics Letters, 1979
- Ionization coefficients of Ga0.72Al0.28Sb avalanche photodetectorsApplied Physics Letters, 1978
- InGaAsP/InP Avalanche PhotodiodeJapanese Journal of Applied Physics, 1978
- The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μmApplied Physics Letters, 1978
- Properties of Liquid Phase Epitaxial In1 − x Ga x As ( x ≅ 0.5 ) on InP SubstrateJournal of the Electrochemical Society, 1978
- Épitaxie en phase liquide des composés III–V sur substrat InPJournal of Crystal Growth, 1975
- Schottky barrier height of n-InxGa1−xAs diodesApplied Physics Letters, 1973