p-n junction diodes in InP and In1−xGaxAsyP1−y fabricated by beryllium-ion implantation
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (3) , 229-231
- https://doi.org/10.1063/1.90740
Abstract
Mesa and planar InP p‐n junction diodes have been fabricated by beryllium‐ion implantation. These devices exhibit abrupt reverse‐bias breakdowns and low leakage currents. Similar mesa diodes have been produced in In1−xGaxAsyP1−y (Eg≈1.0 eV). Diodes operated in the punch‐through mode exhibited uniform breakdown over the area of the device, without any apparent edge effects.Keywords
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