1500-h continuous cw operation of double-heterostructure GaInAsP/InP lasers
- 1 April 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (7) , 353-354
- https://doi.org/10.1063/1.89397
Abstract
The first three double‐heterostructure GaInAsP/InP diode lasers to be life tested have so far logged over 1500, 1100, and 700 h, respectively, of continuous cw operation at room temperature without degradation. Their emission wavelength is 1.15 μm.Keywords
This publication has 9 references indexed in Scilit:
- GaInAsP-InP Double Heterostructure Lasers Prepared by a New LPE ApparatusJapanese Journal of Applied Physics, 1976
- Room-temperature cw operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μ mApplied Physics Letters, 1976
- Spectral losses of low-OH-content optical fibresElectronics Letters, 1976
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976
- Heterostructure injection lasersProceedings of the IEEE, 1976
- Low-threshold room-temperature double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers at 1-μm wavelengthsApplied Physics Letters, 1975
- Room-temperature heterojunction laser diodes of InxGa1−xAs/InyGa1−yP with emission wavelength between 0.9 and 1.15 μmApplied Physics Letters, 1975
- Zero material dispersion in optical fibresElectronics Letters, 1975
- GaAsSb-AlGaAsSb Double Heterojunction LasersJapanese Journal of Applied Physics, 1972