Zn-diffused In0.53Ga0.47As/InP avalanche photodetector
- 15 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (6) , 466-468
- https://doi.org/10.1063/1.91171
Abstract
Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid‐phase‐epitaxial growth on (100) ‐InP substrate and Zn‐diffusion technique. An avalanche multiplication M as high as 32 was measured under broad‐area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron‐beam‐induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.Keywords
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