Ion-implanted InGaAsP avalanche photodiode
- 1 December 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (11) , 920-922
- https://doi.org/10.1063/1.90218
Abstract
High‐quantum‐efficiency planar and mesa InGaAsP avalanche photodiodes have been fabricated by beryllium ion implantation. The implanted diodes, after suitable annealing, exhibited a very low dark current density of 4.0×10−6 A/cm2 at 10 V. The devices have 65% external quantum efficiency at 1.06 μm without an antireflection coating and a uniform avalanche gain of 12.Keywords
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