Tunneling currents in In0.53Ga0.47As homojunction diodes and design of InGaAs/InP hetero-structure avalanche photodiodes
- 31 May 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (5) , 421-424
- https://doi.org/10.1016/0038-1101(81)90039-3
Abstract
No abstract availableKeywords
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