Zener and avalanche breakdown in silicon alloyed p-n junctions—II
- 1 January 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (1) , 117-128
- https://doi.org/10.1016/0038-1101(68)90142-1
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Effect of Degenerate Semiconductor Band Structure on Current-Voltage Characteristics of Silicon Tunnel DiodesPhysical Review B, 1963
- Charge multiplication in silicon p-n junctionsSolid-State Electronics, 1963
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960
- Microplasma Fluctuations in SiliconJournal of Applied Physics, 1959
- Fine Structure in the Absorption-Edge Spectrum of SiPhysical Review B, 1958
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- Observations of Zener Current in GermaniumJunctionsPhysical Review B, 1951