Charge multiplication in silicon p-n junctions
- 1 March 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (2) , 147-157
- https://doi.org/10.1016/0038-1101(63)90009-1
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Uniform Silicon p-n Junctions. II. Ionization Rates for ElectronsJournal of Applied Physics, 1960
- Ionization Rates for Electrons and Holes in SiliconPhysical Review B, 1958
- Threshold Energy for Electron-Hole Pair-Production by Electrons in SiliconPhysical Review B, 1957
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957
- Theory of Electron Multiplication in Silicon and GermaniumPhysical Review B, 1954
- Avalanche Breakdown in SiliconPhysical Review B, 1954
- Electron Multiplication in Silicon and GermaniumPhysical Review B, 1953