Growth dynamics studied by RHEED during SiGe epitaxy from gaseous hydrides

This publication has 27 references indexed in Scilit:

• Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy
  Applied Physics Letters, 1993
• X-ray diffraction investigation of single step and step-graded SiGe alloy buffers for the growth of short-period SimGen superlattices using reciprocal space mapping
  Applied Physics Letters, 1993
• Enhancement mode n -channel Si/SiGe MODFET with high intrinsic transconductance
  Electronics Letters, 1992
• Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular-beam epitaxy
  Applied Physics Letters, 1991
• Anisotropy in surface migration of Si and Ge on Si(001)
  Surface Science, 1991
• 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
  IEEE Electron Device Letters, 1990
• Electronic structure of Ge/Si monolayer strained-layer superlattices
  Physical Review B, 1989
• Theoretical calculations of heterojunction discontinuities in the Si/Ge system
  Physical Review B, 1986
• Avalanche gain in Ge_xSi_1-x/Si infrared waveguide detectors
  IEEE Electron Device Letters, 1986
• The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)
  Surface Science, 1985