Simultaneous molecular beam epitaxy growth and scanning tunneling microscopy imaging during Ge/Si epitaxy
- 29 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (22) , 3055-3057
- https://doi.org/10.1063/1.110256
Abstract
A high temperature scanning tunneling microscope (STM) capable of simultaneous imaging and molecular beam epitaxy (MBE) growth at 600–900 K sample temperature is described. The formation of the two‐dimensional Stranski–Krastanov layer and the evolution of three‐dimensional islands during further growth of Ge on Si(111) was observed. An inversion of the aspect ratio of the islands with increasing coverage indicates a transition from coherent to dislocated 3D islands. This method (MBSTM) opens the possibility to follow MBE growth processes with STM in a real in situ way and gives access to the evolution of specific features during growth.Keywords
This publication has 11 references indexed in Scilit:
- Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kineticsSurface Science, 1992
- In situ observation of epitaxial growth of Co thin films on Cu(100)Ultramicroscopy, 1992
- A Model for Strain-Induced Roughening and Coherent Island GrowthEurophysics Letters, 1992
- Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STMSurface Science, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- On the electrochemical etching of tips for scanning tunneling microscopyJournal of Vacuum Science & Technology A, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Elastic Energies of Coherent Germanium Islands on SiliconMRS Proceedings, 1990
- Coarse tip distance adjustment and positioner for a scanning tunneling microscopeReview of Scientific Instruments, 1989
- An easily operable scanning tunneling microscopeSurface Science, 1987