Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
- 20 August 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (8) , 1020-1023
- https://doi.org/10.1103/physrevlett.65.1020
Abstract
The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of ‘‘macroscopic’’ Ge islands.Keywords
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