Atomic processes in crystal growth
- 1 January 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 299-300, 798-817
- https://doi.org/10.1016/0039-6028(94)90698-x
Abstract
No abstract availableThis publication has 83 references indexed in Scilit:
- Microscopic theory of epitaxial growth on vicinal surfacesPhysical Review B, 1993
- Adatom mobility on vicinal surfaces during epitaxial growthSurface Science, 1992
- Cluster-size distribution during epitaxial growth from the vapor on strongly misoriented surfacesPhysical Review B, 1991
- Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy studyPhysical Review Letters, 1991
- Factors mediating smoothness in epitaxial thin-film growthPhysical Review B, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- STM studies of nucleation and the initial stages of film growthCritical Reviews in Solid State and Materials Sciences, 1990
- Nucleation and Growth Mechanisms in Hetero-Epitaxial FilmsMRS Proceedings, 1990
- Nucleation and growth processes in thin film formationJournal of Vacuum Science & Technology B, 1986
- The growth of crystals and the equilibrium structure of their surfacesPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1951