Low-Temperature Photomagnetoelectric and Photoconductive Effects inn-Type InAs

A Study of the photomagnetoelectric (PME) and photoconductive (PC) effects in $n$-type InAs single crystals has been made between 4.2 and 300 °K under small-signal conditions. It was found that for $T>\mathrm{}77\mathrm{}$ °K the PME open-circuit voltage is proportional to the magnetic induction, and for $T<\mathrm{}21\mathrm{}$ °K the PME open-circuit voltage saturates at large magnetic induction, which is in accord with the large-Hall-angle PME theory. Carrier lifetimes were computed from the PME and PC data between 4.2 and 300 °K, and the hole mobility was estimated from the PME data at 21 and 4.2 °K. The observed linear relationship between the PME open-circuit voltage and photoconductance at low light levels manifests that the effect of trapping is essentially nil over the entire temperature range from 4.2 to 300 °K.