Kinetic suppression of islanding in impurity-mediated heteroepitaxial growth of germanium on silicon
- 2 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2356-2358
- https://doi.org/10.1063/1.111613
Abstract
The impurity-mediated suppression of islanding in molecular beam epitaxy growth experiments of Ge on Si(100) can be understood by a kinetic reduction of surface diffusion. Besides the energy barrier for surface diffusion, an energy barrier for a site exchange mechanism between Ge adatoms and the impurity atoms also has to be considered in a simple phenomenological approach that describes this effect. We found satisfactory agreement with different experimental results, like dependence of kinetic suppression of islanding on temperature and/or submonolayer coverage with impurities and germanium flux density.Keywords
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