Two-dimensional lattice-mismatched heteroepitaxy of germanium on silicon beyond the critical thickness by introducing a surfactant
- 18 May 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (20) , 2522-2524
- https://doi.org/10.1063/1.106926
Abstract
Smooth germanium films have been grown on Si(100) surfaces in a two-dimensional fashion by using antimony as a surfactant. Different ways of depositing the surfactant (at the interface between substrate and growing film, after the deposition of a thin Ge layer, and by coevaporation) have been investigated. The grown films, investigated by high-resolution electron microscopy and reflection high-energy electron diffraction, show that the surfactant does not act at the interface. A kinetical approach for the description of surfactant behavior in the growing front is necessary.Keywords
This publication has 14 references indexed in Scilit:
- Defect self-annihilation in surfactant-mediated epitaxial growthPhysical Review Letters, 1991
- Surfactants in epitaxial growthPhysical Review Letters, 1989
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Growth and properties of Si/SiGe superlatticesSurface Science, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- GexSi1−x/Si strained-layer superlattice grown by molecular beam epitaxyJournal of Vacuum Science & Technology A, 1984
- Defects associated with the accommodation of misfit between crystalsJournal of Vacuum Science and Technology, 1975
- Defects in epitaxial multilayersJournal of Crystal Growth, 1974
- Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or CompoundsJournal of Applied Physics, 1970
- Crystal Interfaces. Part II. Finite OvergrowthsJournal of Applied Physics, 1963