Structural relaxation of SiO2/Si interfacial layer during annealing
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 221-224
- https://doi.org/10.1016/s0169-4332(97)80083-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- High-Density Layer at the SiO2/Si Interface Observed by Difference X-Ray ReflectivityJapanese Journal of Applied Physics, 1996
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical TreatmentJapanese Journal of Applied Physics, 1995
- New diffractometer for thin-film structure analysis under grazing incidence conditionReview of Scientific Instruments, 1995
- Oxidation of siliconPhilosophical Magazine Part B, 1989
- Structural and Strain‐Related Effects during Growth of SiO2 Films on SiliconJournal of the Electrochemical Society, 1987
- Oxidation and the structure of the silicon/oxide interfacePhilosophical Magazine Part B, 1987
- Stress in thermal SiO2 during growthApplied Physics Letters, 1979
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970