Oxidation of silicon
- 1 August 1989
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 60 (2) , 189-212
- https://doi.org/10.1080/13642818908211190
Abstract
No abstract availableThis publication has 74 references indexed in Scilit:
- On the nature of pressure‐induced coordination changes in silicate melts and glassesGeophysical Research Letters, 1987
- Thermionic emission model for the initial regime of silicon oxidationApplied Physics Letters, 1987
- Image charge effects in electron stimulated desorption:fromcondensed on Ar films grown on PtPhysical Review Letters, 1987
- Pressure-induced bond-angle variation in amorphousPhysical Review B, 1987
- The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interfaceJournal of Applied Physics, 1987
- Electron population factor in light enhanced oxidation of siliconApplied Physics Letters, 1987
- Surface effects controlling electron-stimulated oxidation of siliconPhilosophical Magazine Letters, 1987
- Intrinsic SiO2 film stress measurements on thermally oxidized SiJournal of Vacuum Science & Technology B, 1987
- The thermal oxidation of silicon the special case of the growth of very thin filmsAdvances in Physics, 1986
- Kinetics of the Thermal Oxidation of Silicon in O 2 / H 2 O and O 2 / Cl2 MixturesJournal of the Electrochemical Society, 1978