Electron population factor in light enhanced oxidation of silicon
- 5 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (1) , 46-48
- https://doi.org/10.1063/1.98126
Abstract
Electrons in the electron/hole creation event are shown to be the prime catalytic agent in photon-stimulated oxidation enhancement of silicon. Oxidation enhancement in the 10–50% range occurs at only moderate power density levels of visible wavelength light and increases greatly for photon energies just exceeding the conduction-band edge between SiO2 and Si. ‘‘Hot’’-electron injection into the SiO2 is thought to enhance the oxidation via a process of electron attachment to some of the in-diffusing O2 species, with subsequent dissociation into O and O− species. This injected hot-electron flux reaction with O2 is thought to also occur at a reduced level during standard thermal oxidation.Keywords
This publication has 11 references indexed in Scilit:
- Determination of carrier lifetime in Si by optical modulationIEEE Electron Device Letters, 1983
- On the Kinetics of the Thermal Oxidation of Silicon: IV . The Two‐Layer Film ApproximationJournal of the Electrochemical Society, 1983
- Photon enhanced oxidation of siliconApplied Physics Letters, 1983
- Kinetics of Thermal Growth of Ultra-Thin Layers of SiO[sub 2] on SiliconJournal of the Electrochemical Society, 1972
- Photoemission of Electrons from-Type Degenerate Silicon into Silicon DioxidePhysical Review B, 1966
- Photoemission of Holes from Silicon into Silicon DioxidePhysical Review B, 1966
- Photoemission of Electrons from Silicon into Silicon Dioxide. Effects of Ion Migration in the OxideJournal of Applied Physics, 1966
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965
- Measurements of the Attachment of Low-Energy Electrons to Oxygen MoleculesPhysical Review B, 1962
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960