Photon enhanced oxidation of silicon
- 1 January 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (1) , 63-65
- https://doi.org/10.1063/1.93726
Abstract
Experiments have been conducted to show that at low laser power densities the enhanced oxidation rate of silicon is linearly proportional to the photon flux density for photon energies in the range 2.4–2.7 eV. The enhancement effect is greater for 〈100〉 Si than for 〈111〉 Si.Keywords
This publication has 3 references indexed in Scilit:
- Optically enhanced oxidation of semiconductorsJournal of Vacuum Science and Technology, 1981
- Ultraviolet-Enhanced Oxidation of SiliconJournal of Applied Physics, 1971
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965