A novel buried oxide isolation for monolithic RF inductors on silicon
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High Q microwave inductors in CMOS double-metal technology and its substrate bias effects for 2 GHz RF ICs applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- On-chip spiral inductors with patterned ground shields for Si-based RF ICsIEEE Journal of Solid-State Circuits, 1998
- Integrated RF and microwave components in BiCMOS technologyIEEE Transactions on Electron Devices, 1996