Integrated RF and microwave components in BiCMOS technology
- 1 January 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 43 (9) , 1559-1570
- https://doi.org/10.1109/16.535350
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- High Q inductors for wireless applications in a complementary silicon bipolar processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave inductors and capacitors in standard multilevel interconnect silicon technologyIEEE Transactions on Microwave Theory and Techniques, 1996
- Low-power radio-frequency ICs for portable communicationsProceedings of the IEEE, 1995
- Multilevel monolithic inductors in silicon technologyElectronics Letters, 1995
- Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistorsIEEE Transactions on Electron Devices, 1995
- Si/SiGe epitaxial-base transistors. II. Process integration and analog applicationsIEEE Transactions on Electron Devices, 1995
- Large suspended inductors on silicon and their use in a 2- mu m CMOS RF amplifierIEEE Electron Device Letters, 1993
- B6HF: A 0.8 micron 25GHz/25ps bipolar technology for "Mobile radio" and "Ultra fast data link" IC-productsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Microwave characterization of microstrip lines and spiral inductors in MCM-D technologyIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1992
- Si IC-compatible inductors and LC passive filtersIEEE Journal of Solid-State Circuits, 1990