Si/SiGe epitaxial-base transistors. II. Process integration and analog applications
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (3) , 469-482
- https://doi.org/10.1109/16.368043
Abstract
For pt. I, see ibid., vol. 3, p. 455-68 (1995). This part focuses on process integration concerns, first described in general terms and then detailed through an extensive review of both simple non-self-aligned device structures and more complex self-aligned device structures. The extension of SiGe device technology to high levels of integration is then discussed through a detailed review of a full SiGe HBT BiCMOS process. Finally, analog circuit design is discussed and concluded, with a description of a 12-bit Digital-to-Analog Converter presented to highlight the current status of SiGe technology.Keywords
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