Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors

Publisher Website

1 January 1990

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/vlsit.1990.111005

Abstract

No abstract available

This publication has 3 references indexed in Scilit:

Effect of polysilicon-emitter shape on dopant diffusion in polysilicon-emitter transistors
IEEE Electron Device Letters, 1989
On the narrow-emitter effect of advanced shallow-profile bipolar transistors
IEEE Transactions on Electron Devices, 1988
High-performance transistors with arsenic-implanted polysil emitters
IEEE Journal of Solid-State Circuits, 1976