High-performance transistors with arsenic-implanted polysil emitters

This publication has 10 references indexed in Scilit:

• Bipolar high-speed low-power gates with double implanted transistors
  IEEE Journal of Solid-State Circuits, 1975
• Fully ion-implanted bipolar transistors
  IEEE Transactions on Electron Devices, 1974
• Effect of emitter doping on device characteristics
  IEEE Transactions on Electron Devices, 1973
• Calculation of the emitter efficiency of bipolar transistors
  IEEE Transactions on Electron Devices, 1973
• Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters
  IEEE Transactions on Electron Devices, 1973
• Transport equations in heavy doped silicon
  IEEE Transactions on Electron Devices, 1973
• Characteristics of high performance microwave transistors fabricated by ion implantation
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1973
• Diffusion of Boron from Shallow Ion Implants in Silicon
  Journal of the Electrochemical Society, 1972
• Investigation of current-gain temperature dependence in silicon transistors
  IEEE Transactions on Electron Devices, 1969
• The temperature dependence of ideal gain in double diffused silicon transistors
  IEEE Transactions on Electron Devices, 1968