Bipolar high-speed low-power gates with double implanted transistors
- 1 August 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (4) , 201-204
- https://doi.org/10.1109/jssc.1975.1050594
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- A versatile, ion implanted bipolar transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Large-Signal Behavior of Junction TransistorsProceedings of the IRE, 1954