High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor
- 1 September 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (9) , 450-452
- https://doi.org/10.1109/55.244710
Abstract
High-performance Si and SiGe epitaxial base bipolar transistors have been fabricated using a commercially available, reduced pressure, epitaxial reactor. The SiGe devices exhibit exceptional Early voltages in the range of 400-500 V, and an f/sub T/ of 31 GHz with a BV/sub CEO/ of 7.6 V and BV/sub CBO/ of 16 V. These results demonstrate that SiGe has potential as a commercially viable technology for analog, digital, and mixed-signal applications.Keywords
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