Characterization of epitaxial SiGe thin films on Si: Analytical considerations

This publication has 8 references indexed in Scilit:

• 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors
  IEEE Electron Device Letters, 1990
• Heterojunction bipolar transistors using Si-Ge alloys
  IEEE Transactions on Electron Devices, 1989
• Resonant tunneling in Si/Si1−xGex double-barrier structures
  Applied Physics Letters, 1988
• Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation
  Applied Physics Letters, 1986
• Physics and applications of Ge_xSi_1-x/Si strained-layer heterostructures
  IEEE Journal of Quantum Electronics, 1986
• Enhancement- and depletion-mode p-channel Ge_xSi_1-xmodulation-doped FET's
  IEEE Electron Device Letters, 1986
• Avalanche gain in Ge_xSi_1-x/Si infrared waveguide detectors
  IEEE Electron Device Letters, 1986
• GexSi1−x strained-layer superlattice waveguide photodetectors operating near 1.3 μm
  Applied Physics Letters, 1986