Physics and applications of GexSi1-x/Si strained-layer heterostructures
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 22 (9) , 1696-1710
- https://doi.org/10.1109/jqe.1986.1073152
Abstract
No abstract availableKeywords
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