Comparison of boron diffusion in Si and strained Si1−xGex epitaxial layers

8 February 1993

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 62 (6) , 612-614
https://doi.org/10.1063/1.108872

Abstract

We have investigated boron diffusion in Si and strained Si_1−xGe_x, in situ doped, epitaxial layers. During inert ambient annealing at 860 °C, boron diffusion is observed to be slower in Si_0.83Ge_0.17 than in Si for boron concentration levels between 5×10¹⁶ and 2.5×10¹⁹ cm⁻³. Computer simulations of the measured boron profiles for annealed samples indicate that the effective boron diffusivity D_eff in Si_0.83Ge_0.17 is approximately an order of magnitude lower than that in Si. This disparity is found to increase with increasing boron concentration.

Keywords

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