Anomalous co-diffusion effects of germanium on group III and V dopants in silicon
- 8 February 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (6) , 471-473
- https://doi.org/10.1063/1.99447
Abstract
Anomalous diffusion effects are observed when germanium is co-diffused with phosphorus, boron, or arsenic in inert or oxidizing ambients. The germanium, an uncharged column IV dopant with a covalent radius close to that of silicon, appears to alter the point defect population in the silicon lattice. During oxidation, the usual oxidation enhanced diffusion is not observed when Ge is present in the lattice. The anomalous tail diffusion of high-concentration phosphorus is also reduced when Ge is present.Keywords
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