Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon
- 1 April 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (7) , 616-619
- https://doi.org/10.1063/1.93200
Abstract
An analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that during oxidation a local equilibrium of point defects is attained. It is shown that the Sb ORD data can be explained quantitatively. Under most oxidation conditions the SiO2-Si interface acts as a source of Si self-interstitials, but at sufficiently high temperatures and long oxidation times the SiO2-Si interface behaves as a sink for Si self-interstitials (or equivalently as a source of vacancies). We suggest a model for this sink behavior in terms of the formation of SiO molecules at the interface and of their subsequent diffusion into the SiO2 film.Keywords
This publication has 13 references indexed in Scilit:
- Growth kinetics of oxidation-induced stacking faults in silicon: A new conceptApplied Physics Letters, 1981
- The Oxidation Rate Dependence of Oxidation‐Enhanced Diffusion of Boron and Phosphorus in SiliconJournal of the Electrochemical Society, 1981
- Retardation of Sb Diffusion in Si during Thermal OxidationJapanese Journal of Applied Physics, 1981
- The effect of oxidation on the diffusion of phosphorus in siliconJournal of Applied Physics, 1979
- High-field conduction and breakdown in liquid sulfurApplied Physics Letters, 1975
- Formation of stacking faults and enhanced diffusion in the oxidation of siliconJournal of Applied Physics, 1974
- On phosphorus diffusion in silicon under oxidizing atmospheresSolid-State Electronics, 1973
- The orientation dependent diffusion of boron in silicon under oxidizing conditionsSolid-State Electronics, 1969
- Diffusion Mechanisms and Point Defects in Silicon and GermaniumPhysica Status Solidi (b), 1968
- Diffraction contrast analysis of two-dimensional defects present in silicon after annealingPhilosophical Magazine, 1966