Characteristics of a Metal/Ferroelectric/Insulator/Semiconductor Structure Using an Ultrathin Nitrided Oxide Film as the Buffer Layer

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Abstract
A SrBi2Ta2O9 (SBT) thin film was prepared on a SiON/p-Si(100) substrate at a process temperature of 700°C. Interdiffusion between the SBT material and Si substrate was not observed in X-ray photoelectron spectroscopy (XPS) analysis and in the transmission electron microscope (TEM) image. From the capacitance-voltage (C-V) measurement, we observed the width of the threshold hysteresis (“memory window”) of 1.21 V. In the curve fitting of the C-V characteristics, the C-V curve fitted the curve calculated by the Miller method fairly well. It is considered that these characteristics are due to the prevention of interdiffusion by the SiON thin film.