Nonintrusive wafer temperature measurement using in situ ellipsometry
- 1 March 1991
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (5) , 3390-3392
- https://doi.org/10.1063/1.348517
Abstract
It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO2. The values of these parameters have been redetermined in this work.This publication has 4 references indexed in Scilit:
- Infrared-laser interferometric thermometry: A nonintrusive technique for measuring semiconductor wafer temperaturesJournal of Vacuum Science & Technology A, 1990
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Temperature measurements of glass substrates during plasma etchingJournal of Vacuum Science and Technology, 1981
- Mueller matrix ellipsometry with imperfect compensatorsJournal of the Optical Society of America, 1978