Effect of substrate temperature on the nucleation of glow discharge hydrogenated amorphous silicon

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Abstract
The effect of substrate temperature (Ts) on the initial nucleation of hydrogenated amorphous silicon (a‐Si:H) prepared by glow discharge has been studied using an in situ ellipsometry probe. Evidence in the ellipsometry data for clustering of Si–Si bonds at nucleation centers, for films prepared with Ts ∼250 °C, gradually disappears as Ts is reduced below ∼200 °C. This indicates that the clustering process accompanies defect reduction during growth commonly observed in glow discharge a‐Si:H as Ts is increased. For Ts >200 °C, a sufficiently high surface mobility may enable the depositing species to bind at lower energy sites, thus explaining the observed results.

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