A comparison of simple and numerical two-dimensional models for the threshold voltage of short channel MOSTs
- 31 December 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 993-998
- https://doi.org/10.1016/0038-1101(77)90209-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Improved yields for MOST’s using ion implantationJournal of Applied Physics, 1976
- A simple theory to predict the threshold voltage of short-channel IGFET'sSolid-State Electronics, 1974
- Lateral spread of ion-implanted impurities in siliconJournal of Applied Physics, 1974
- An analysis of the threshold voltage for short-channel IGFET'sSolid-State Electronics, 1973
- Two-dimensional solution of the d.c. characteristics for the m.o.s.t.Electronics Letters, 1969
- Optimum accelerating factor for s.o.r. solutions of domains containing ∂φ/∂ n = 0 boundary conditionsElectronics Letters, 1969