The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration
- 1 June 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (6A) , L891
- https://doi.org/10.1143/jjap.28.l891
Abstract
The energy-level structure of the D X centers corresponding to specific local environments was investigated under hydrostatic pressure. Several discrete D X levels, each of which was a well-defined single level, were clearly resolved. The energy level of the Si D X center surrounded only with Ga was determined to be 295 meV above the Γ-conduction band edge of GaAs. When Al is coordinated as the 2nd-nearest neighbor, the energy level is lowered by as much as 120 meV. The energy level is sensitive not only to the number of Al 2nd-nearest neighbors, but also to the atomic configuration itself.Keywords
This publication has 13 references indexed in Scilit:
- Physical meaning of electron capture kinetics on D X centersApplied Physics Letters, 1988
- Electron Localization by a Metastable Donor Level in: A New Mechanism Limiting the Free-Carrier DensityPhysical Review Letters, 1988
- Investigation of theDXcenter in heavily dopedn-GaAsPhysical Review Letters, 1987
- Hot-electron capture to D X centers in AlxGa1−xAs at low Al mole fractions (x<0.2)Applied Physics Letters, 1986
- Shallow-deep instability of donor impurity states in Al-Ga-As system and its control by superlattice structureSurface Science, 1986
- Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient SpectroscopyJapanese Journal of Applied Physics, 1985
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Alloy Fluctuation in Mixed Compound Semiconductors as Studied by Deep Level Transient SpectroscopyJapanese Journal of Applied Physics, 1984
- Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–Japanese Journal of Applied Physics, 1983