Growth of large crystals of (Pb,Ge)Te and (Pb,Sn)Te
- 1 November 1974
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 3 (4) , 731-746
- https://doi.org/10.1007/bf02651397
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Striations Due to Compositional Variations in Czochralski-Grown (Pb[sub 1−x]Sn[sub x])[sub 1−y]Te[sub y]Journal of the Electrochemical Society, 1973
- cw operation and nitric oxide spectroscopy using diode lasers of Pb1−xGex TeApplied Physics Letters, 1972
- Single crystal growth of lead-tin tellurideJournal of Electronic Materials, 1972
- Phase relations and transformations in the system PbTe-GeTeJournal of Physics and Chemistry of Solids, 1972
- Ein isothermes schmeltztropfen-verfahren zur herstellung von grossen, sehr reinen und homogenen blei-zinn-tellurd-einkristallen aus der dampfphaseJournal of Crystal Growth, 1971
- SPONTANEOUS AND LASER EMISSION FROM Pb1−xSnxTe DIODES PREPARED BY Sb DIFFUSIONApplied Physics Letters, 1970
- Rapid, nondestructive evaluation of macroscopic defects in crystalline materials: The laue topography of (Hg, Cd) TeMetallurgical Transactions, 1970
- Preparation and properties of lead-tin telluride photodiodesSolid-State Electronics, 1970
- Metallic Inclusions and Cellular Substructure in Pb[sub 1?x]Sn[sub x]Te Single CrystalsJournal of the Electrochemical Society, 1969
- LONG-WAVELENGTH INFRARED Pb1−xSnxTe DIODE LASERSApplied Physics Letters, 1968