Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's
- 1 August 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 16 (8) , 351-353
- https://doi.org/10.1109/55.400735
Abstract
The effect of ionizing radiation on both the electrical and 1/f noise characteristics of advanced UHV/CVD SiGe HBT's is reported for the first time. Only minor degradation in the current-voltage characteristics of both SiGe HBT's and Si BJT's is observed after total radiation dose exposure of 2.0 Mrad(Si) of gamma-radiation. The observed immunity to ionizing radiation exposure suggests that these SiGe HBT's are well suited for many applications requiring radiation tolerance. We have also observed the appearance of ionizing-radiation-induced generation-recombination (G/R) noise in some of these SiGe HBT's.<>Keywords
This publication has 13 references indexed in Scilit:
- Optimization of SiGe HBT technology for high speed analog and mixed-signal applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Silicon germanium heterojunction bipolar technology: the next leap in silicon?Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVDIEEE Transactions on Nuclear Science, 1995
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuitsIEEE Transactions on Electron Devices, 1995
- Si/SiGe epitaxial-base transistors. II. Process integration and analog applicationsIEEE Transactions on Electron Devices, 1995
- Physical mechanisms contributing to enhanced bipolar gain degradation at low dose ratesIEEE Transactions on Nuclear Science, 1994
- Trends in the total-dose response of modern bipolar transistorsIEEE Transactions on Nuclear Science, 1992
- Deep-level impurity analysis for p-n junctions of a bipolar transistor from low-frequency g-r noise measurementsSolid-State Electronics, 1989
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986