Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures
- 1 January 1993
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Low temperature chemical beam epitaxy of gallium phosphide/silicon heterostructuresMaterials Science and Engineering: B, 1993
- Efficient photo-enhancement of GaP and AlGaP growth in chemical beam epitaxyJournal of Applied Physics, 1991