Efficient photo-enhancement of GaP and AlGaP growth in chemical beam epitaxy
- 15 November 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (10) , 5708-5709
- https://doi.org/10.1063/1.350195
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Progress in chemical beam epitaxyJournal of Crystal Growth, 1990
- Temperature dependence of InGaP, InAlP, and AlGaP growth in metalorganic molecular-beam epitaxyJournal of Crystal Growth, 1990
- Formation of periodic structures during excimer laser-assisted heteroepitaxy of GaPJournal of Applied Physics, 1990
- Ultraviolet laser-induced low-temperature epitaxy of GaPApplied Physics Letters, 1989
- Carbon reduction in GaAs films grown by laser-assisted metalorganic molecular beam epitaxyApplied Physics Letters, 1989
- Metalorganic molecular-beam epitaxy of InGaPJournal of Applied Physics, 1989
- Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAsApplied Physics Letters, 1989
- The ultraviolet absorpton spectra of selected organometallic compounds used in the chemical vapor deposition of gallium arsenideJournal of Crystal Growth, 1987
- The vapour-phase ultraviolet spectra of metallo-organic precursors to III?V compoundsJournal of Materials Science, 1983