Ultraviolet laser-induced low-temperature epitaxy of GaP
- 21 August 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8) , 738-740
- https://doi.org/10.1063/1.101791
Abstract
An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal growth. Electrical properties of p-n diodes fabricated via Zn doping have also been examined.Keywords
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