MOCVD Growth of InP Using Plasma Pre-Cracking

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Abstract
Plasma cracking of PH3 has been successfully applied in growing InP by MOCVD at 2.6 Torr. Plasma effects are an increase in the growth rate, the reduction of surface roughness and an increase in the photoluminescence intensity. This technique is very useful in growing any III-V alloy semiconductor systems, especially for thin-film growth. This is because the growth pressure can be reduced without being affected by an imperfect decomposition of the source gases. The growth parameter dependence of the grown-layer characteristics are investigated in this paper.