A new cracking method for group V hydrides in the MOCVD growth using triethylindium (TEI)
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 32-38
- https://doi.org/10.1016/0022-0248(84)90393-2
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Room-temperature pulsed operation of AlGaInP/GaInP/AlGaInP double heterostructure visible light laser diodes grown by metalorganic chemical vapor depositionApplied Physics Letters, 1983
- Alloy composition and flow rates in Ga x In 1−x As y P 1−y lattice-matched to InP grown by MO-CVDElectronics Letters, 1983
- A New AsH3 Cracking Method for the MOCVD Growth of InGaAsJapanese Journal of Applied Physics, 1983
- Organometallic Vapor Phase Epitaxial Growth of In1-xGaxAsyP1-y on GaAsJapanese Journal of Applied Physics, 1983
- MOCVD-Grown Al0.5In0.5P–Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 KJapanese Journal of Applied Physics, 1982
- InP MESFET Grown by MOCVDJapanese Journal of Applied Physics, 1982
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981
- GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applicationsJournal of Crystal Growth, 1981
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1973
- Indium PhosphideJournal of the Electrochemical Society, 1973