GaInAs and GaInAsP materials grown by low pressure MOCVD for microwave and optoelectronic applications
- 1 October 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 55 (1) , 64-73
- https://doi.org/10.1016/0022-0248(81)90272-4
Abstract
No abstract availableKeywords
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