1.5–1.7 μm v.p.e. InGaAsP/InP c.w. lasers
- 19 June 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (13) , 516-518
- https://doi.org/10.1049/el:19800361
Abstract
Room temperature c.w. lasing operation has been achieved at 1.55 μm with InGaAsP/InP devices and at 1.65 μm with InGaAs/InP devices prepared via vapour-phase epitaxy. Lasing threshold currents vary as exp (T – 20)/T0 with 40<T0 <60°C.Keywords
This publication has 1 reference indexed in Scilit:
- Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy techniqueProgress in Crystal Growth and Characterization, 1979