Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique
- 31 December 1979
- journal article
- Published by Elsevier in Progress in Crystal Growth and Characterization
- Vol. 2, 309-375
- https://doi.org/10.1016/0146-3535(81)90039-3
Abstract
No abstract availableThis publication has 80 references indexed in Scilit:
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