A New AsH3 Cracking Method for the MOCVD Growth of InGaAs
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A) , L630
- https://doi.org/10.1143/jjap.22.l630
Abstract
We have demonstrated the MOCVD growth of InGaAs on an InP substrate under atmospheric pressure by cracking AsH3. The self-cracking system has been employed; AsH3 is introduced by passing near the rf-heated susceptor into the reactor tube, resulting in AsH3 cracking prior to its mixing with triethylindium and triethylgallium source materuals. The typical carrier concentration and Hall mobility obtained are 4.7×1016 cm-3 and 3,050 cm2/Vsec at room temperature, respectively. The half width of the photoluminescence spectrum is as narrow as 19 meV at 77 K. These results are comparable to those of liquid phase epitaxy grown InGaAs.Keywords
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