InP MESFET Grown by MOCVD
- 1 September 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (9A) , L548
- https://doi.org/10.1143/jjap.21.l548
Abstract
MESFET devices with 2 µm gate length have been fabricated on InP epitaxial layers grown by the MOCVD technique on Fe-doped semi-insulating InP substrates. The best electrical properties of InP epitaxial films have been measured and are n=2.7×1015 cm-3 and µ=3500 cm2/V·s at room temperature. The barrier height and the ideality factor of Au-n InP Schottky diode were estimated to be 0.66 eV and 1.18, respectively. Depletion mode n-channel MESFET has shown transconductance of ∼90 mS/mm and the saturation drain current of ∼20 mA at zero gate bias.Keywords
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