The electrical characteristics of InP Schottky diodes
- 1 September 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (9) , 5699-5701
- https://doi.org/10.1063/1.329507
Abstract
Au‐n+‐type InP Schottky diodes have been fabricated using anodic oxidation and etching with aqueous HCl. The electrical characteristics are measured and discussed based upon the effects of surface states between the gate metal and semiconductor. Typical values of the barrier height, ideality factor and surface state density are evaluated as 0.55 eV, 1.34 and 4.2×1012 cm−2 eV−1, respectively. The mean electron affinity at the semiconductor surface is found to be about 0.5‐eV‐smaller than the bulk electron affinity. Further, the stability of the diode characteristics has been examined.This publication has 11 references indexed in Scilit:
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