Measurement of Richardson constant of GaAs Schottky barriers
- 28 February 1981
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (2) , 185-191
- https://doi.org/10.1016/0038-1101(81)90016-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Electrical characteristics of GaAs MIS Schottky diodesSolid-State Electronics, 1979
- Studies of aluminum Schottky barrier gate annealing on GaAs FET structuresSolid-State Electronics, 1978
- Richardson constant of Al- and Au-GaAs Schottky barrier diodesApplied Physics Letters, 1977
- Inclusion of carrier temperature effects in a thermionic-diffusion theory of the schottky barrierSolid-State Electronics, 1974
- Gallium Arsenide Surface Film Evaluation by Ellipsometry Its Effect on Schottky BarriersJournal of the Electrochemical Society, 1973
- Transport Properties of Metal-Silicon Schottky BarriersJapanese Journal of Applied Physics, 1969
- Current transport in metal-semiconductor barriersSolid-State Electronics, 1966
- Experimental Study of Gold-Gallium Arsenide Schottky BarriersJournal of Applied Physics, 1965
- Au-n-Type GaAs Schottky Barrier and Its Varactor ApplicationBell System Technical Journal, 1964
- Diffusion of Hot and Cold Electrons in Semiconductor BarriersPhysical Review B, 1962